Mn2CoZ „Z=Al,Ga,In,Si,Ge,Sn,Sb... compounds: Structural, electronic, and magnetic properties

نویسندگان

  • G. D. Liu
  • X. F. Dai
  • H. Y. Liu
  • J. L. Chen
  • Y. X. Li
  • Gang Xiao
  • G. H. Wu
چکیده

G. D. Liu,1 X. F. Dai,2 H. Y. Liu,2 J. L. Chen,1 Y. X. Li,2 Gang Xiao,3 and G. H. Wu1 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People’s Republic of China 2School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130, People’s Republic of China 3Department of Physics, Brown University, Providence, Rhode Island 02912, USA Received 4 April 2007; published 17 January 2008

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Investigation of structural and electronic properties of UY2(Y=Ga,Ge)

In this paper, some of the electronic and structural properties of UY2(Y=Ga,Ge) compounds are investigated. The calculations was conducted using the pseudopotential method based on the density functional theory with PWscf code.. The exchange function is a correlation between GGA.PBE and LDA. The increase in pressure also leads to positive changes in the enthalpy of the system, which indicates t...

متن کامل

L21 and XA Ordering Competition in Hafnium-Based Full-Heusler Alloys Hf2VZ (Z = Al, Ga, In, Tl, Si, Ge, Sn, Pb)

For theoretical designing of full-Heusler based spintroinc materials, people have long believed in the so-called Site Preference Rule (SPR). Very recently, according to the SPR, there are several studies on XA-type Hafnium-based Heusler alloys X₂YZ, i.e., Hf₂VAl, Hf₂CoZ (Z = Ga, In) and Hf₂CrZ (Z = Al, Ga, In). In this work, a series of Hf₂-based Heusler alloys, Hf₂VZ (Z = Al, Ga, In, Tl, Si, G...

متن کامل

Comparison of the effect of Si and Ge presence on phase formation process, the structural and magnetic properties of Co2FeX (X=Ge,Si) Heusler compounds

In this study, the Co2FeX (X=Ge, Si) Heusler compounds with 30 valence electrons, which are made by using mechanical alloying and arc melting methods were studied. The crystallization of samples was confirmed by XRD data in both manufacturing methods. The results showed that the presence of Si than Ge in the compound played a more effective role to creation a large scale atomic ordering, and th...

متن کامل

First Principle Study of MC (M= Al, Ga, and In) at Equilibrium and under Negative Stress

The electronic and magnetic properties of the hypothetical compounds of MC (M=Al, Ga and In) are investigated by using first-principle calculations and pseudopotential plane wave self-consistent field method based on density functional theory. In order to find the most stable phase of MC (M=Al, Ga and In), we study them in zinc-blende (ZB), rocksalt (RS), wurtzite and NiAs crystal structures. W...

متن کامل

Antiferromagnetism in Ru2MnZ (Z=Sn, Sb, Ge, Si) full Heusler alloys: effects of magnetic frustration and chemical disorder

We present systematic theoretical investigations to explore the microscopic mechanisms leading to the formation of antiferromagnetism in Ru2MnZ (Z= Sn,Sb,Ge,Si) full Heusler alloys. Our study is based on first-principles calculations of inter-atomic Mn-Mn exchange interactions to set up a suitable Heisenberg spin-model and on subsequent Monte-Carlo simulations of the magnetic properties at fini...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008